Technical parameters/polarity: NPN
Technical parameters/dissipated power: 650 mW
Technical parameters/DC current gain (hFE): 63
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56-10
|
Infineon | 类似代替 | SOT-223-4-10 |
NXP BCP56-10 单晶体管 双极, NPN, 80 V, 180 MHz, 640 mW, 1 A, 63 hFE
|
||
BCP56-10
|
Nexperia | 类似代替 |
NXP BCP56-10 单晶体管 双极, NPN, 80 V, 180 MHz, 640 mW, 1 A, 63 hFE
|
|||
BCP56-10
|
CJ | 类似代替 | SOT-223-3 |
NXP BCP56-10 单晶体管 双极, NPN, 80 V, 180 MHz, 640 mW, 1 A, 63 hFE
|
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