Technical parameters/frequency: 100 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 125 @2mA, 5V
Technical parameters/rated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/packaging: SOT-416
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC856ALT1G 单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 100 hFE
|
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