Technical parameters/rated power: 0.2 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 220 @2mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 220
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857BW,115
|
NXP | 完全替代 | SOT-323-3 |
BC857BW 系列 PNP 45 V 100 mA 表面贴装 通用 晶体管 - SOT-323
|
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