Technical parameters/frequency: 200 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858C-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
DIODES INC. BC858C-7-F 单晶体管 双极, PNP, -30 V, 200 MHz, 300 mW, -100 mA, 600 hFE
|
||
BC859CW,115
|
Nexperia | 功能相似 | SOT-323-3 |
NXP BC859CW,115 单晶体管 双极, PNP, -30 V, 100 MHz, 200 mW, -100 mA, 420 hFE
|
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