Technical parameters/minimum current amplification factor (hFE): 420
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/length: 1.8 mm
External dimensions/width: 0.9 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-416
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
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Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
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|||
BC857CT
|
Nexperia | 功能相似 | SOT-416 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
|
||
BC857CT
|
NXP | 功能相似 | SOT-416 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
|
||
BC857CT
|
Vishay Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
|
|||
BC857CTT1
|
ON Semiconductor | 功能相似 | SOT-416 |
通用晶体管PNP硅 General Purpose Transistor PNP Silicon
|
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