Technical parameters/dissipated power: 430 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-883-3
External dimensions/length: 1.02 mm
External dimensions/width: 0.62 mm
External dimensions/height: 0.47 mm
External dimensions/packaging: SOT-883-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857CM
|
NXP | 类似代替 | DFN |
PNP通用晶体管 PNP general purpose transistors
|
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