Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): -45.0 V
Technical parameters/rated current: -100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 220 @2mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-70-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857BW,115
|
NXP | 功能相似 | SOT-323-3 |
NXP BC857BW,115 单晶体管 双极, 通用, PNP, 45 V, 200 mW, 100 mA, 220 hFE
|
||
SBC857BWT1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 220 hFE
|
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