Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC848B-7-F
|
Diodes | 功能相似 | SOT-23-3 |
DIODES INC. BC848B-7-F 单晶体管 双极, NPN, 30 V, 300 MHz, 300 mW, 100 mA, 330 hFE
|
||
BC848BW-TP
|
Micro Commercial Components | 功能相似 | SOT-323 |
SOT-323 NPN 30V 0.1A
|
||
BC849B-TP
|
Micro Commercial Components | 完全替代 | SOT-23-3 |
30V, 100mA,0.25W(1/4W), NPN Transistor, SOT-23 / 7" REEL
|
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