Technical parameters/minimum current amplification factor (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-88
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-88
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: PB free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857BS-7-F
|
Diodes | 功能相似 | SOT-363-6 |
三极管
|
||
BC857BV
|
NXP | 完全替代 | SOT-666 |
NXP BC857BV 双极晶体管阵列, 通用, PNP, 45 V, 200 mW, -100 mA, 200 hFE, SOT-666
|
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