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Model BC857ALT1G
Description PNP Transistors, such as ON Semiconductor bipolar transistors, can amplify analog or digital signals. They can also switch DC or be used as oscillators. ###Standard Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
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Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.08  yuan 0.08yuan
20+:
$ 0.1080
50+:
$ 0.1000
100+:
$ 0.0960
300+:
$ 0.0928
500+:
$ 0.0904
1000+:
$ 0.0888
5000+:
$ 0.0872
10000+:
$ 0.0856
Quantity
20+
50+
100+
300+
500+
Price
$0.1080
$0.1000
$0.0960
$0.0928
$0.0904
Price $ 0.1080 $ 0.1000 $ 0.0960 $ 0.0928 $ 0.0904
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9944) Minimum order quantity(20)
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Technical parameters/frequency: 100 MHz

Technical parameters/rated voltage (DC): -45.0 V

Technical parameters/rated current: -100 mA

Technical parameters/number of pins: 3

Technical parameters/polarity: PNP

Technical parameters/dissipated power: 225 mW

Technical parameters/gain bandwidth product: 100 MHz

Technical parameters/breakdown voltage (collector emitter): 45 V

Technical parameters/maximum allowable collector current: 0.1A

Technical parameters/minimum current amplification factor (hFE): 125 @2mA, 5V

Technical parameters/rated power (Max): 225 mW

Technical parameters/DC current gain (hFE): 90

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -50 ℃

Technical parameters/dissipated power (Max): 300 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 3.04 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1.11 mm

External dimensions/packaging: SOT-23-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BC860BMTF BC860BMTF Fairchild 类似代替 SOT-23-3
ON Semiconductor BC860BMTF , PNP 晶体管, 100 mA, Vce=45 V, HFE:110, 150 MHz, 3引脚 SOT-23封装
PDF
BC860BMTF BC860BMTF ON Semiconductor 类似代替 SOT-23-3
ON Semiconductor BC860BMTF , PNP 晶体管, 100 mA, Vce=45 V, HFE:110, 150 MHz, 3引脚 SOT-23封装
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PMMT591A@215 PMMT591A@215 NXP 类似代替 SOT-23-3
PMMT591A@215

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