Technical parameters/frequency: 200 MHz
Technical parameters/rated power: 0.3 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 125 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.05 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.98 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | 3 |
Trans GP BJT PNP 45V 0.1A 3Pin SOT-323
|
||
|
|
Siemens AG | 功能相似 | SOT-323 |
Trans GP BJT PNP 45V 0.1A 3Pin SOT-323
|
||
BC857AW
|
Diotec Semiconductor | 功能相似 | SOT-323 |
Trans GP BJT PNP 45V 0.1A 3Pin SOT-323
|
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