Technical parameters/frequency: 200 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 220 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 475
Technical parameters/rated power (Max): 310 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC 856B E6433
|
Infineon | 功能相似 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Silicon AF TRANSISTOR
|
||
BC856B-7-F
|
Multicomp | 类似代替 | SOT-23 |
BC856B 系列 65 V 100 mA 表面贴装 PNP 通用 晶体管 - SOT-23
|
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