Technical parameters/number of pins: 3
Technical parameters/dissipated power: 310 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 250 @100mA, 1V
Technical parameters/rated power (Max): 310 mW
Technical parameters/DC current gain (hFE): 170
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, audio, industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-40LT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC807-40LT3G Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE 新
|
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