Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 100 mA
Technical parameters/number of pins: 6
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 380 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 420
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 380 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC848CPDW
|
Leshan Radio | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP,
|
|||
BC848CPDW1T1
|
ON Semiconductor | 类似代替 | SC-70-6 |
双路通用晶体管（ NPN / PNP对偶） Dual General Purpose Transistors(NPN/PNP Duals)
|
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