Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 310 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 110 @2mA, 5V
Technical parameters/rated power (Max): 310 mW
Technical parameters/DC current gain (hFE): 110
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC850AMTF
|
Fairchild | 完全替代 | SOT-23-3 |
ON Semiconductor BC850AMTF , NPN 晶体管, 100 mA, Vce=45 V, HFE:110, 300 MHz, 3引脚 SOT-23封装
|
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