Technical parameters/frequency: 300 MHz
Technical parameters/dissipated power: 0.31 W
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/minimum current amplification factor (hFE): 110 @2mA, 5V
Technical parameters/rated power (Max): 310 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC846ALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC846ALT1G 单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC846BMTF
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor BC846BMTF , NPN 晶体管, 100 mA, Vce=65 V, HFE:110, 300 MHz, 3引脚 SOT-23封装
|
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