Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC808-25LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC808-25LT1G 新
|
||
BC808-40LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
SOT-23 PNP 25V 0.5A
|
||
BC808-40LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
通用晶体管PNP硅 General Purpose Transistors PNP Silicon
|
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