Technical parameters/number of pins: 3
Technical parameters/dissipated power: 310 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 250 @100mA, 1V
Technical parameters/rated power (Max): 310 mW
Technical parameters/DC current gain (hFE): 170
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Central Semiconductor | 功能相似 | SOT-23 |
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UTC | 功能相似 |
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Fairchild | 功能相似 | SOT-23 |
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Rectron Semiconductor | 功能相似 | SOT-23 |
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BC808-25LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC808-25LT1G 新
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||
BC80840MTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BC80840MTF 单晶体管 双极, PNP, -25 V, 100 MHz, 310 mW, -800 mA, 170 hFE
|
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