Technical parameters/polarity: PNP
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 110 @2mA, 5V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC558BTAR
|
Fairchild | 功能相似 | TO-226-3 |
Trans GP BJT PNP 30V 0.1A 3Pin TO-92 Ammo
|
||
BC559BU
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Si Transistor Epitaxial
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review