Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/gain bandwidth product: 300 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC548C
|
Taiwan Semiconductor | 完全替代 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC548C
|
NXP | 完全替代 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC548C
|
Micro Commercial Components | 完全替代 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC548C
|
Infineon | 完全替代 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC549CBU
|
Fairchild | 功能相似 | TO-226-3 |
Trans GP BJT NPN 30V 0.1A 3Pin TO-92 Bulk
|
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