Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -500 mA
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 140 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC558A
|
Diotec Semiconductor | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC558A
|
Micro Electronics | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
BC558A
|
General Semiconductor | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
BC558A
|
ITT Corporation | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
PN3638A
|
Fairchild | 功能相似 | TO-226-3 |
t-Pnp Si-Gen Pur Amp + Sw
|
||
|
|
Central Semiconductor | 功能相似 | TO-92 |
t-Pnp Si-Gen Pur Amp + Sw
|
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