Technical parameters/frequency: 210 MHz
Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 800 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 210 MHz
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 630
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC33725BU
|
Rochester | 类似代替 | TO-92 |
ON Semiconductor BC33725BU , NPN 晶体管, 800mA, Vce=50 V, HFE:60, 100 MHz, 3引脚 TO-92封装
|
||
BC337RL1G
|
ON Semiconductor | 类似代替 | TO-92-3 |
ON SEMICONDUCTOR BC337RL1G 单晶体管 双极, NPN, 45 V, 210 MHz, 625 mW, 800 mA, 100 hFE
|
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