Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -800 mA
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 45.0 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC327-25-BP
|
Micro Commercial Components | 类似代替 | TO-92 |
TO-92 PNP 45V 0.8A
|
||
|
|
General Semiconductor | 功能相似 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
|||
BC327-40
|
NXP | 功能相似 | TO-92 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
||
BC327-40
|
Philips | 功能相似 | TO-92-3 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
||
BC327-40
|
Semtech Corporation | 功能相似 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
|||
|
|
ON Semiconductor | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
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