Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 60 @100mA, 2V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC487G
|
ON Semiconductor | 功能相似 | TO-226-3 |
大电流晶体管NPN硅 High Current Transistors NPN Silicon
|
||
BC639-10-BP
|
Micro Commercial Components | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
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