Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1500 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 200 MHz
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT3904LT1G
|
onsemi | 功能相似 | - |
ON SEMICONDUCTOR MMBT3904LT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
|
||
MMBT3904LT1G
|
Leshan Radio | 功能相似 | SOT-23 |
ON SEMICONDUCTOR MMBT3904LT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
|
||
MMBT3906LT1G
|
Rochester | 功能相似 | SOT-23 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
||
MMBT3906LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
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