Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 1000mA
Technical parameters/minimum current amplification factor (hFE): 85
Technical parameters/Maximum current amplification factor (hFE): 375
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Minimum Packaging: 2000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Continental Device | 功能相似 | TO-92 |
Small Signal Bipolar Transistor,
|
||
BC369
|
NXP | 功能相似 | TO-92 |
Small Signal Bipolar Transistor,
|
||
BC369
|
CJ | 功能相似 | TO-92 |
Small Signal Bipolar Transistor,
|
||
BC369-25
|
NXP | 类似代替 | SPT |
PNP中等功率晶体管; PNP medium power transistor;
|
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