Technical parameters/number of pins: 3
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 160
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817-25W,115
|
NXP | 功能相似 | SOT-323-3 |
Nexperia BC817-25W,115 , NPN 晶体管, 500 mA, Vce=45 V, HFE:40, 100 MHz, 3引脚 UMT封装
|
||
BC817-25W,115
|
Nexperia | 功能相似 | SOT-323-3 |
Nexperia BC817-25W,115 , NPN 晶体管, 500 mA, Vce=45 V, HFE:40, 100 MHz, 3引脚 UMT封装
|
||
BC817-40W-7
|
Diodes Zetex | 功能相似 | SOT-323 |
DIODES INC. BC817-40W-7 单晶体管 双极, NPN, 45 V, 100 MHz, 200 mW, 500 mA, 250 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review