Technical parameters/number of pins: 2
Technical parameters/forward voltage: 800mV @100mA
Technical parameters/thermal resistance: 320℃/W (RθJA)
Technical parameters/reverse recovery time: 4 ns
Technical parameters/forward current: 200 mA
Technical parameters/Maximum forward surge current (Ifsm): 5 A
Technical parameters/forward voltage (Max): 800 mV
Technical parameters/forward current (Max): 200 mA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 125℃ (Max)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AG
External dimensions/length: 3.04 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: DO-204AG
Physical parameters/operating temperature: -65℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Consumer Electronics, Industrial, Power Management, Portable Devices, Consumer Electronics, Portable Equipment, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAT42
|
Taiwan Semiconductor | 功能相似 | DO-35 |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
BAT42
|
Multicomp | 功能相似 | DO-35 |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
BAT42
|
Vishay Semiconductor | 功能相似 | DO-35 |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
|
|
VISHAY | 功能相似 | DO-204AH |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
BAT43
|
ST Microelectronics | 功能相似 | DO-35 |
STMICROELECTRONICS BAT43 小信号肖特基二极管, 单, 30 V, 200 mA, 1 V, 4 A, 125 °C
|
||
|
|
CJ | 功能相似 | SOD-123 |
STMICROELECTRONICS BAT43 小信号肖特基二极管, 单, 30 V, 200 mA, 1 V, 4 A, 125 °C
|
||
BAT85
|
Philips | 完全替代 | DO-34 |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAT85
|
Philips | 完全替代 | DO-34 |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
|
|
Changzhou ZhongGuang | 完全替代 | DO-35 |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAT85
|
Continental Device | 完全替代 |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
|||
BAT85
|
Good-Ark Electronics | 完全替代 | DO-35 |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAT85,113
|
Nexperia | 类似代替 | DO-34 |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAT85,113
|
NXP | 类似代替 | DO-204AG |
肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
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