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Model BAT754A
Description Schottky barrier diode, 200mA to 500mA, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current
Product QR code
Brand: Nexperia
Packaging TO-236
Delivery time
Packaging method
Standard packaging quantity 1
0.41  yuan 0.41yuan
20+:
$ 0.5508
50+:
$ 0.5100
100+:
$ 0.4896
300+:
$ 0.4733
500+:
$ 0.4610
1000+:
$ 0.4529
5000+:
$ 0.4447
10000+:
$ 0.4366
Quantity
20+
50+
100+
300+
500+
Price
$0.5508
$0.5100
$0.4896
$0.4733
$0.4610
Price $ 0.5508 $ 0.5100 $ 0.4896 $ 0.4733 $ 0.4610
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4404) Minimum order quantity(20)
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Technical parameters/Maximum forward surge current (Ifsm): 600 mA

Technical parameters/forward current (Max): 200 mA

Technical parameters/operating temperature (Max): 125 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/length: 3 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1 mm

External dimensions/packaging: TO-236

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards:

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BAT754 BAT754 Philips 类似代替 SOT-23
肖特基势垒二极管，200mA 至 500mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
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BAT754C BAT754C Kexin 类似代替
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BAT754C BAT754C TY Semiconductor 类似代替
肖特基势垒二极管，200mA 至 500mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
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BAT754S BAT754S TY Semiconductor 类似代替
NXP BAT754S 小信号肖特基二极管, 双系列, 30 V, 200 mA, 260 mV, 600 mA, 125 °C
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BAT754S BAT754S Nexperia 类似代替
NXP BAT754S 小信号肖特基二极管, 双系列, 30 V, 200 mA, 260 mV, 600 mA, 125 °C
PDF
BAT754S BAT754S NXP 类似代替 SOT-23
NXP BAT754S 小信号肖特基二极管, 双系列, 30 V, 200 mA, 260 mV, 600 mA, 125 °C
PDF

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