Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Reverse Voltage VrReverse Voltage: 100V
Other/Average Rectified Current: 200mA/0.2A
Other/maximum forward voltage drop VFForward Voltage (Vf): 1.25V
Other/Reverse Recovery Time TrrReverse Recovery Time: 50ns
Other/Maximum dissipated power PdPower Dissipation: 350mW/0.35W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS19,215
|
NXP | 功能相似 | SOT-23-3 |
小信号开关二极管,Nexperia ### 特点 支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容
|
||
BAS19-7-F
|
Diodes | 功能相似 | SOT-23-3 |
二极管-标准-100V-200mA-表面贴装型-SOT-23-3
|
||
BAS19-V-GS08
|
Vishay Semiconductor | 完全替代 | SOT-23 |
小信号开关二极管,高压 Small Signal Switching Diodes, High Voltage
|
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