Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/number of pins: 24
Technical parameters/clock frequency: 200 GHz
Technical parameters/access time: 200 ns
Technical parameters/memory capacity: 2000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 24
Encapsulation parameters/Encapsulation: EDIP-24
External dimensions/length: 38.1 mm
External dimensions/width: 18.29 mm
External dimensions/height: 10.67 mm
External dimensions/packaging: EDIP-24
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Embedded Design & Development, Embedded Design and Development
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1220AB-200+
|
Dallas Semiconductor | 类似代替 | 720 EMOD |
MAXIM INTEGRATED PRODUCTS DS1220AB-200+ 芯片, 存储器, NVRAM
|
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