Technical parameters/working voltage: 10 V
Technical parameters/breakdown voltage: 12.3 V
Technical parameters/dissipated power: 1 W
Technical parameters/clamp voltage: 17 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 11.1 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/length: 5.59 mm
External dimensions/width: 3.94 mm
External dimensions/height: 2.44 mm
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ10CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ10CA-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
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