Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 8.9A
Technical parameters/Input capacitance (Ciss): 540pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8915TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF8915TRPBF 双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V 新
|
||
IRF8915TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF8915TRPBF 双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V 新
|
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