Technical parameters/rise/fall time: 60ns, 35ns (Max)
Technical parameters/number of output interfaces: 2
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 625 mW
Technical parameters/descent time (Max): 35 ns
Technical parameters/rise time (Max): 60 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRS21811STR
|
Infineon | 完全替代 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IR2183SPBF
|
IFA | 类似代替 |
INFINEON IR2183SPBF 双路驱动器, MOSFET, 高压侧和低压侧, 10V-20V电源, 2.3A输出, 220ns延迟, SOIC-8
|
|||
IRS2181SPBF
|
IFC | 类似代替 |
INFINEON IRS2181SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2.3A输出, 220ns延迟, SOIC-8
|
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