Technical parameters/polarity: N-CH
Technical parameters/product series: AUIRF3808S
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 106A
Technical parameters/rise time: 140 ns
Technical parameters/Input capacitance (Ciss): 5310pF @25V(Vds)
Technical parameters/descent time: 120 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: D2PAK-263
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF3808
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON AUIRF3808 晶体管, MOSFET, N沟道, 140 A, 75 V, 0.0059 ohm, 10 V, 2 V
|
||
AUIRF3808S
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON AUIRF3808S 晶体管, MOSFET, N沟道, 106 A, 75 V, 0.0059 ohm, 10 V, 2 V
|
||
AUIRF3808STRR
|
Infineon | 功能相似 | TO-252-3 |
D2PAK N-CH 75V 106A
|
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