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Model AUIRFS3307Z
Description N Channel power MOSFET, Infineon Infineon's comprehensive AECQ-101 automotive qualification single-chip N-channel device combination can meet various power requirements in many applications. The discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
12.75  yuan 12.75yuan
5+:
$ 14.9222
50+:
$ 14.2845
200+:
$ 13.9274
500+:
$ 13.8381
1000+:
$ 13.7488
2500+:
$ 13.6468
5000+:
$ 13.5830
7500+:
$ 13.5192
Quantity
5+
50+
200+
500+
1000+
Price
$14.9222
$14.2845
$13.9274
$13.8381
$13.7488
Price $ 14.9222 $ 14.2845 $ 13.9274 $ 13.8381 $ 13.7488
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5092) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.0046 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 230 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 75 V

Technical parameters/Continuous drain current (Ids): 128A

Technical parameters/rise time: 64 ns

Technical parameters/Input capacitance (Ciss): 4750pF @50V(Vds)

Technical parameters/descent time: 65 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 230W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Not Recommended

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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