Technical parameters/rated power: 300 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0018 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 270A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 6450pF @25V(Vds)
Technical parameters/descent time: 130 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Electric Power Steering, Motor drive and control, Brushless Motor Drive, Motor Drive & Control, Automotive, Power Management, Relay Replacement, Power management, automotive use
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IRF | 类似代替 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
|||
IRF2804PBF
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF2804PBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
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