Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 310 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 250 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 630
Technical parameters/rated power (Max): 310 mW
Technical parameters/DC current gain (hFE): 170
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC81740MTF
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor BC81740MTF , NPN 晶体管, 800mA, Vce=45 V, HFE:60, 100 MHz, 3引脚 SOT-23封装
|
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