Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 60 @5mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSVMUN2212T1G
|
ON Semiconductor | 功能相似 | SC-59-3 |
数字晶体管( BRT ) R1 = 22千欧, R2 = 22 K· Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
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Philips | 类似代替 | SC-59 |
PDTC124EK 带阻NPN三极管 50V 100mA/0.1A 22k 22k 增益60 SOT-23/SC-59A marking/标记 6
|
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PDTC124EK
|
NXP | 类似代替 | SC-59A |
PDTC124EK 带阻NPN三极管 50V 100mA/0.1A 22k 22k 增益60 SOT-23/SC-59A marking/标记 6
|
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