Technical parameters/dissipated power: 310 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC2618
|
Kexin | 功能相似 |
2SC2618 NPN三极管 35V 500mA/0.5A 160~320 600mV/0.6V SOT-23/SC-59/MPAK marking/标记 RD 低频放大器
|
|||
BC818-16
|
Micro Commercial Components | 类似代替 |
Transistor: NPN; bipolar; 25V; 800mA; 310mW; SOT23
|
|||
BC818-16
|
Central Semiconductor | 类似代替 |
Transistor: NPN; bipolar; 25V; 800mA; 310mW; SOT23
|
|||
BC818-16
|
Diotec Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 25V; 800mA; 310mW; SOT23
|
||
BC818-16
|
Infineon | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 25V; 800mA; 310mW; SOT23
|
||
BC818.16
|
Micro Commercial Components | 功能相似 |
SOT-23 NPN 25V
|
|||
BCW71T116
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
Bipolar Transistors - BJT NPN 45V 100mA
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review