Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KBP10
|
Taiwan Semiconductor | 功能相似 |
Bridge Rectifier Diode, 1A, 1000V V(RRM),
|
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KBP10
|
Mospec | 功能相似 |
Bridge Rectifier Diode, 1A, 1000V V(RRM),
|
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S1WB(A)80-7062
|
Shindengen | 功能相似 | DIP |
桥式整流器 VRM=800V IFSM=30
|
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