Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/output current: ≤3.00 A
Technical parameters/forward voltage: 1V @3A
Technical parameters/polarity: Standard
Technical parameters/forward voltage (Max): 1V @3A
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.5 mm
External dimensions/width: 5.3 mm
External dimensions/height: 5.3 mm
External dimensions/packaging: DO-201AD
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Galaxy Semi-Conductor | 类似代替 |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
|||
1N5400G
|
Taiwan Semiconductor | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
||
|
|
Vishay Semiconductor | 类似代替 |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
|||
1N5400G
|
LiteOn | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
||
|
|
EIC | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
||
|
|
HY Electronic | 类似代替 |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
|||
|
|
DC Components | 类似代替 |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
|||
1N5400G
|
Vishay Intertechnology | 类似代替 |
ON SEMICONDUCTOR 1N5400G 标准恢复二极管, 单, 50 V, 3 A, 1 V, 200 A
|
|||
|
|
Rectron | 功能相似 | DO-201AD |
整流器 3.0A 50V
|
||
1N5400G-T
|
Diodes | 功能相似 | DO-201AD |
整流器 3.0A 50V
|
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