Technical parameters/frequency: 2 GHz
Technical parameters/rated current: 145 mA
Technical parameters/dissipated power: 725 mW
Technical parameters/output power: 20 dBm
Technical parameters/gain: 17.5 dB
Technical parameters/test current: 60 mA
Technical parameters/operating temperature (Max): 160 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 725 mW
Technical parameters/rated voltage: 5.5 V
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/height: 1 mm
External dimensions/packaging: SOT-343
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ATF-34143-BLK
|
Agilent | 完全替代 | SC-70 |
Trans FET N-CH 5.5V 145mA pHEMT 4Pin(3+Tab) SOT-343 Bag
|
||
ATF-34143-BLKG
|
Agilent | 完全替代 | SC-70 |
N 通道 HEMT,Avago Technologies 高电子迁移率晶体管(HEMT,也称为异质结构或异质结 FET)是结型 FET,利用两种材料,具有不同带隙(即异质结),用作 MOSFET 中替换掺杂区的通道。 HEMT 晶体管具有良好的高频率特性且通常用于小信号、低噪声 RF 应用。 HEMT、HFET、HJ-FET 和 MODFET 是用于描述此类型晶体管的所有术语。 pHEMT 或假同晶 HEMT 是基本 HEMT 晶体管类型的变型,具有 E-pHEMT 设备,正成为增强模式类型。 ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
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|---|---|---|
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