Technical parameters/frequency: 2 GHz
Technical parameters/rated voltage (DC): 4.50 V
Technical parameters/rated current: 1 A
Technical parameters/drain source voltage (Vds): 7.00 V
Technical parameters/Continuous drain current (Ids): 1.00 A
Technical parameters/output power: 29 dBm
Technical parameters/gain: 15.5 dB
Technical parameters/test current: 280 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: ECL99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ATF-50189-BLK
|
Broadcom | 类似代替 | SOT-89 |
BROADCOM LIMITED ATF-50189-BLK 晶体管, 射频FET, 高线性度, 7 V, 1 A, 2.25 W, 400 MHz, 3.9 GHz, SOT-89
|
||
ATF-50189-BLK
|
AVAGO Technologies | 类似代替 | SOT-89 |
BROADCOM LIMITED ATF-50189-BLK 晶体管, 射频FET, 高线性度, 7 V, 1 A, 2.25 W, 400 MHz, 3.9 GHz, SOT-89
|
||
|
|
Agilent | 功能相似 | SOT-89 |
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review