Technical parameters/frequency: 2 GHz
Technical parameters/dissipated power: 270 mW
Technical parameters/output power: 14.4 dBm
Technical parameters/gain: 17.7 dB
Technical parameters/test current: 10 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 270 mW
Technical parameters/rated voltage: 5 V
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/height: 1 mm
External dimensions/packaging: SOT-343
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ATF-55143-TR1
|
AVAGO Technologies | 类似代替 | SOT-343 |
IC TRANS E-PHEMT 2GHz SOT-343
|
||
ATF-55143-TR1G
|
AVAGO Technologies | 完全替代 | SOT-343 |
BROADCOM LIMITED ATF-55143-TR1G 晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
|
||
ATF-55143-TR1G
|
AVAGO Technologies | 完全替代 | SOT-343 |
BROADCOM LIMITED ATF-55143-TR1G 晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
|
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