Technical parameters/rated voltage (DC): 3.00 V
Technical parameters/rated current: 60.0 A
Technical parameters/dissipated power: 360 mW
Technical parameters/drain source voltage (Vds): 3.00 V
Technical parameters/leakage source breakdown voltage: 5 V
Technical parameters/breakdown voltage of gate source: ±5 V
Technical parameters/Continuous drain current (Ids): 120 mA
Technical parameters/gain: 17.5 dB
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: Mini PAK
External dimensions/packaging: Mini PAK
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Agilent | 类似代替 |
射频结栅场效应晶体管(RF JFET)晶体管 Transistor GaAs Single Voltage
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