Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 8dB ~ 17dB
Technical parameters/minimum current amplification factor (hFE): 30 @10mA, 8V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -60 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: Die
External dimensions/packaging: Die
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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