Technical parameters/frequency: 81.36 MHz
Technical parameters/rated current: 9 A
Technical parameters/dissipated power: 180000 mW
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500V (min)
Technical parameters/rise time: 4.1 ns
Technical parameters/output power: 100 W
Technical parameters/gain: 15 dB
Technical parameters/test current: 50 mA
Technical parameters/Input capacitance (Ciss): 1200pF @50V(Vds)
Technical parameters/descent time: 4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 180000 mW
Technical parameters/rated voltage: 500 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ARF463BP1G
|
Microsemi | 类似代替 | TO-247-3 |
Trans RF MOSFET N-CH 500V 9A 3Pin(3+Tab) TO-247
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review