Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 780 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 56A
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 8800pF @25V(Vds)
Technical parameters/descent time: 33 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 780W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/packaging: TO-264-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFK48N50
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
IXYS SEMICONDUCTOR IXFK48N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
|
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