Technical parameters/polarity: NPN
Technical parameters/dissipated power: 28000 mW
Technical parameters/breakdown voltage (collector emitter): 450 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 8 @2A, 5V
Technical parameters/rated power (Max): 28 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 28000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT13005TF-G1
|
BCD Semiconductor | 功能相似 |
TRANS NPN 450V 4A TO2203
|
|||
APT13005TF-G1
|
Diodes | 功能相似 | TO-220-3 |
TRANS NPN 450V 4A TO2203
|
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